Method of fabricating package structure

ABSTRACT

A package structure includes: a first dielectric layer having a first surface and a second surface opposing the first surface; a semiconductor chip embedded in the first dielectric layer in a manner that the semiconductor chip protrudes from the second surface, and having an active surface and an inactive surface opposing the active surface, electrode pads being disposed on the active surface and in the first dielectric layer, the inactive surface and a part of a side surface adjacent the inactive surface protruding from the second surface; a first circuit layer disposed on the first surface; a built-up structure disposed on the first surface and the first circuit layer; and an insulating protective layer disposed on the built-up structure, a plurality of cavities being formed in the insulating protective layer for exposing a part of a surface of the built-up structure. The package structure includes only one built-up structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of U.S. Patent Application No. 13/207,756, filed on Aug. 11,2011, now allowed, which claims the priority benefit of Taiwan patentapplication serial no. 99139081, filed on Nov. 12, 2010. The entirety ofeach of the above-mentioned patent applications is hereby incorporatedby reference herein and made a part of this specification.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a method of fabricating a package structure,and, more particularly, to a method of fabricating a package structurehaving a semiconductor component embedded therein, the package structurehaving no core board.

2. Description of Related Art

With the rapid development of semiconductor package technology, modemsemiconductor devices may have various package types. In a semiconductordevice, a chip is installed on and electrically connected to a packagingsubstrate, and is encapsulated with an encapsulant. In order to reducethe height of the package, the chip may be embedded in the packagingsubstrate. Such a package not only has a reduced size, but also canimprove the electrical functionality thereof.

Referring to FIGS. 1A to 1E, which are cross-sectional viewsillustrating a method of fabricating a package structure having asemiconductor component embedded therein according to the prior art.

As shown in FIG. 1A, a core board 10 is provided with an opening 100that penetrates the core board 10. Interlayer circuits 101 are formed ontop and bottom sides of the core board 10. Conductive through holes 102are formed in and penetrate the core board 10. The conductive throughholes 102 electrically connect the interlayer circuits 101.

As shown in FIG. 1B, a carrier board 14 having a dielectric material 120a is disposed on a bottom side of the core board 10, and a semiconductorchip 11 having a plurality of electrode pads 100 is received in theopening 100 and is disposed on the dielectric material 120 a by anadhesive layer 11 a.

As shown in FIG. 1C, another dielectric material 120 b is compressed ona top side of the core board 10 and the semiconductor chip 11, such thatthe two dielectric materials 120 a and 120 b form the dielectric layer12. The dielectric layer 12 is filled in an interval between an openingwall of the opening 100 and the semiconductor chip 11, in order to fixthe semiconductor chip 11 in the opening 100. Then, the carrier board 14is removed.

As shown in FIG. 1D, circuit layers 13 are formed on top and bottomsides of the dielectric layer 12. The circuit layers 13 have conductivevias 130 that are disposed in the dielectric layer 12 and electricallyconnected to the electrode pads 110 and the interlayer circuits 101.Conductive pads 130 a are formed on the top one of the circuit layers13, and ball-implanting pads 130 b are formed on the bottom one of thecircuit layers 13.

As shown in FIG. 1E, solder masks 15 are formed on the dielectric layer12 and the circuit layers 13. Cavities 150 are formed in the soldermasks 15, for exposing the conductive pads 130 a and the ball-implantingpads 130 b.

In the prior art, the opening 100 must be formed in the core board 10,such that the dielectric layer 12 on two sides of the core board 10compresses, and may displace the semiconductor chip 12. As shown in FIG.1C, the left and right intervals between the semiconductor chip 11 andthe opening wall of the opening 100 are denoted by t and s,respectively, wherein t<s, and the semiconductor chip 11 has a shapingoffset approximately equal to +/−100 μm. In other words, it is hard tolocate the semiconductor chip 11 in the opening 100 correctly. As thesemiconductor chip 11 is displaced, the electrode pads 110 of thesemiconductor chip 11 may not be electrically connected to theconductive vias 130 exactly, as shown in FIG. 1D. Therefore, the packagestructure may suffer from poor electrical connection quality and lowproduct yield.

Moreover, no heat-dissipating structure is embedded in the opening 100of the core board 10, so the heat generated by the semiconductor chip11, which is embedded in the opening 100 of the core board 10, isdissipated without efficiency, and the semiconductor chip 11 may likelymalfunction.

Moreover, the semiconductor chip 11 has to be embedded in the core board10, which is thicker than the semiconductor chip 11. Accordingly, thethickness of the overall structure may be increased significantly due tothe core board 10, and the product is also thick, which is contradictoryto the low-profile and compact-size requirements.

No circuit may be fabricated on two sides of the core board 10, unlessthe conductive through holes 102 are fabricated that electricallyconnect the interlayer circuits 101 and the circuit layers 13 on twosides of the core board 10. Such a package structure is thus difficultto be fabricated, and has a high cost.

Therefore, how to overcome the drawbacks of the prior art is becomingone of the most urgent issues in the art.

SUMMARY OF THE INVENTION

In view of the above-mentioned problems of the prior art, an embodimentof the present invention provides a package structure having asemiconductor component embedded therein and a method of fabricating apackage structure having a semiconductor component embedded therein witha better alignment.

Another embodiment of the present invention provides a package structurehaving a semiconductor component embedded therein and a method offabricating the same with a well heat-dissipating capability.

Another embodiment of the present invention provides a package structurehaving a semiconductor component embedded therein and a method offabricating the same with a thinned capacity.

Yet another embodiment of the present invention provides a packagestructure having a semiconductor component embedded therein and a methodof fabricating the same with a reduced cost.

In order to accomplish the above and other embodiments, an embodiment ofthe present invention provides a package structure having asemiconductor component embedded therein, including: a first dielectriclayer having a first surface and a second surface opposing the firstsurface; a semiconductor chip embedded in the first dielectric layer ina manner that the semiconductor chip protrudes from the second surfaceof the first dielectric layer, and having an active surface and aninactive surface opposing the active surface, electrode pads beingdisposed on the active surface and in the first dielectric layer, theinactive surface and a part of a side surface adjacent the inactivesurface protruding from the second surface of the first dielectriclayer; a first circuit layer disposed on the first surface of the firstdielectric layer, a plurality of first conductive vias being formed inthe first dielectric layer and electrically connected to the firstcircuit layer and the electrode pads; a built-up structure disposed onthe first surface of the first dielectric layer and the first circuitlayer; and an insulating protective layer disposed on the built-upstructure, a plurality of cavities being formed in the insulatingprotective layer for exposing a part of a surface of the built-upstructure.

In an embodiment of the present invention, the package structure furtherincludes a metal layer disposed on the second surface of the dielectriclayer, the metal layer having an opening in which the semiconductor chipis disposed and used as a heat-dissipating component; the packagestructure further includes a carrier layer disposed on the metal layerand the inactive surface of the semiconductor chip and used as anotherheat-dissipating component; and the carrier layer is made of copper.

In an embodiment of the present invention, the built-up structurecomprises at least a second dielectric layer, a second circuit layer onthe second dielectric layer, and a plurality of second conductive viasdisposed in the second dielectric layer and electrically connected tothe first and second circuit layers, a part of a surface of the secondcircuit layer exposed from the cavities.

In an embodiment of the present invention, the package structure furtherincludes a surface treatment layer disposed on the exposed surface ofthe built-up structure in the cavities, and the surface treatment layeris made of a material selected from the group consisting ofelectroplated nickel/gold, electroless nickel/gold, electroless nickelimmersion gold (ENIG), electroless nickel electroless palladiumimmersion gold (ENEPIG), immersion tin or organic solderabilitypreservative (OSP).

An embodiment of the present invention further provides a method offabricating a package structure having a semiconductor componentembedded therein, comprising: providing a core board having two opposingsurfaces on which two carrier layers are formed; forming on the carrierlayers two metal layers having openings for exposing a part of surfacesof the carrier layers; disposing on the carrier layers in the openingssemiconductor chips having active surfaces and inactive surfacesopposing the active surfaces, with electrode pads disposed on the activesurfaces, the semiconductor chips combining with the carrier layers inthe openings by means of the inactive surfaces; forming on the metallayers and the semiconductor chips first dielectric layers that haveexposed first surfaces and second surfaces combined with the metallayers; forming first circuit layers on the first surfaces of the firstdielectric layers, and forming in the first dielectric layers aplurality of first conductive vias electrically connected to the firstcircuit layers and the electrode pads; forming built-up structures onthe first surfaces of the first dielectric layers and the first circuitlayers; forming insulating protective layers on the built-up structures,and forming in the insulating protective layers a plurality of cavitiesfor exposing a part of surfaces of the built-up structures; and removingthe core board, so as to expose the carrier layers.

In an embodiment of the present invention, de-bonding layers are formedbetween the two surfaces of the core board and the carrier layers, suchthat the core board is removed by means of the de-bonding layers.

In an embodiment of the present invention, the carrier layers are madeof copper.

In an embodiment of the present invention, the metal layers are made by:forming resist layers on the carrier layers, and forming opening areason the resist layers for exposing the part of the surfaces of thecarrier layers; forming the metal layers on the carrier layers withinthe opening areas; and removing the resist layers, so as to form theopenings.

In an embodiment of the present invention, each of the built-upstructures comprises at least a second dielectric layer, a secondcircuit layer disposed on the second dielectric layer, and a pluralityof second conductive vias disposed in the second dielectric layer andelectrically connected to the first and second circuit layers, such thata part of a surface of the second circuit layer of the built-upstructure is exposed from the cavities.

In an embodiment of the present invention, after the core board isremoved, the carrier layers and the metal layers are used asheat-dissipating components.

In an embodiment of the present invention, the method further includes,after the core board is removed, removing the carrier layers and themetal layers, so as to expose the second surfaces of the dielectriclayers, with the inactive surfaces and a part of side surfaces adjacentto the inactive surfaces protruding from the second surfaces of thedielectric layers.

In an embodiment of the present invention, the method further includesforming surface treatment layers on the exposed surfaces of the built-upstructures in the cavities, and each of the surface treatment layers aremade of a material selected from the group consisting of electroplatednickel/gold, electroless nickel/gold, electroless nickel immersion gold(ENIG), electroless nickel electroless palladium immersion gold(ENEPIG), immersion tin and organic solderability preservative (OSP).

In the package structure having the semiconductor component embeddedtherein and the method of fabricating the same according to the presentinvention, the alignment precision may be improved, through theinstallation of the semiconductor chip on the carrier layer. Through theremoval of the core board and the installation of the built-up structureon only one surface of the first dielectric layer, the overall structuremay have a reduced thickness, so as to achieve the thinning objective. Aprocess of fabricating the conductive through holes that penetrate twosides of the overall structure is not performed. Therefore, the processis simplified, and the cost is reduced. Moreover, that the semiconductorchip protrudes from the dielectric layer or covers the metal layer mayenhance the heat-dissipating capability of the semiconductor chip, andprotects the semiconductor chip from overheating and damaged.

BRIEF DESCRIPTION OF DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIGS. 1A to 1E are cross-sectional views illustrating a method offabricating a package structure having a semiconductor componentembedded therein according to the prior art; and

FIGS. 2A to 2H are cross-sectional views illustrating a method offabricating a package structure having a semiconductor componentembedded therein according to the present invention, wherein FIG. 2H′ isanother embodiment of FIG. 2H.

DESCRIPTION OF THE EMBODIMENTS

The following illustrative embodiments are provided to illustrate thedisclosure of the present invention, these and other advantages andeffects can be apparently understood by those in the art after readingthe disclosure of this specification. The present invention can also beperformed or applied by other different embodiments. The details of thespecification may be on the basis of different points and applications,and numerous modifications and variations can be devised withoutdeparting from the spirit of the present invention.

Referring to FIGS. 2A to 2E, which are cross-sectional viewsillustrating a method of fabricating a package structure having asemiconductor component embedded therein according to the presentinvention.

As shown in FIG. 2A, a core board 20 is provided that has two opposingsurfaces 20 a. A de-bonding layer 200 and a carrier layer 21 made ofcopper are disposed sequentially on each of the surfaces 20 a of thecore board 20.

As shown in FIG. 2B, a resist layer 22 is formed on each of the carrierlayers 21, and then the resist layer 22 is exposed and developed to forman opening area 220, from which a part of a surface of the carrier layer21 is exposed. Then, the carrier layer 21 is electroplated to form ametal layer 23 that is also made of copper.

As shown in FIG. 2C, the resist layer 22 is removed, to form the metallayer 23 that has an opening 230, from which a part of a surface of thecarrier layer 21 is exposed. In an embodiment of the present invention,the opening 230 is defined as a chip carrying area.

As shown in FIG. 2D, a semiconductor chip 24 is installed on the carrierlayer 21 in the opening 230. The semiconductor chip 24 has an activesurface 24 a and an inactive surface 24 b opposing the active surface 24a. Electrode pads are disposed on the active surface 24 a. The inactivesurface 24 b of the semiconductor chip 24 combines with the carrierlayer 21 in the opening 230. Through the exposure and developmentprocesses performed on the resist layer 22, the semiconductor chip 24may have a location precision equivalent to an exposure alignmentprecision. Therefore, the alignment precision (the shaping offset isapproximately equal to +/−10 μm) is increased significantly, as comparedwith the method according to the prior art.

Then, a first dielectric layer 25 is formed on the metal layer 23 andthe semiconductor chip 24. The first dielectric layer 25 has an exposedfirst surface 25 a and a second surface 25 b combined with the metallayer 23.

As shown in FIG. 2E, a first circuit layer 26 is formed on the firstsurface 25 a of the first dielectric layer 25, and a plurality of firstconductive vias 260 are formed in the first dielectric layer 25 andelectrically connected to the first circuit layer 26 and the electrodepads 240. In an embodiment of the present invention, the firstdielectric layer 25 may have a thickness that is adjustable according toa radius of a laser drill of the first conductive vias 260 to be formedin the first dielectric layer 25.

Afterwards, a built-up structure 27 is formed on the first surface 25 aof the first dielectric layer 25 and the first circuit layer 26. Thebuilt-up structure 27 has at least a second dielectric layer 270, asecond circuit layer 271 disposed on the second dielectric layer 270,and second conductive vias 272 disposed in the second dielectric layer270 and electrically connected to the first circuit layer 26 and thesecond circuit layer 271.

An insulating protective layer 28 is then formed on the built-upstructure 27. A plurality of cavities 280 are formed in the insulatingprotective layer 28, for exposing a part of a surface of the secondcircuit layer 271 of the built-up structure 27.

A surface treatment layer 29 is then formed on the exposed surface ofthe second circuit layer 271 in the cavities 280. In an embodiment ofthe present invention, the surface treatment layer 29 is made ofelectroplated nickel/gold, ENIG, ENEPIG, immersion tin or OSP.

As shown in FIG. 2F, the core board 20 is removed by means of thede-bonding layer 20. As a result, a coreless package structure that hasno core board is formed. The coreless package structure has a reducedthickness, so as to meet the low-profile and compact-size requirements.

As shown in FIG. 2G, the carrier layer 21 and the metal layer 23 areremoved, such that the second surface 25 b of the first dielectric layer25 is exposed, and the inactive surface 24 b of the semiconductor chip24 and a part of a side surface adjacent to the inactive surface 24 bprotrude from the second surface 25 b of the first dielectric layer 25.Therefore, the heat-dissipating capability is enhanced, and thesemiconductor chip 24 can be protected from over-heating and damaged.

The electroplated metal layer 23 has a height equal to a height of thesemiconductor chip 24 that protrudes from the second surface 25 b of thefirst dielectric layer 25. Therefore, the height of the protrusion canbe controlled as desired based on the height of the metal layer 23. Theembedding depth of the semiconductor chip 24 can also be controlled, soas to conveniently adjust parameters in the laser drill processperformed on the first conductive vias 260.

As shown in FIG. 2H, during subsequent processes solder balls 30 may beformed on the exposed surface of the second circuit layer 271 of thebuilt-up structure 27. A printed circuit board 31 may be installed onthe solder balls 30.

According to the present invention, the resist layer 22 is exposed anddeveloped. As a result, the semiconductor chip 24 has a shaping offsetapproximately equal to +/−10 μm, which is far smaller than the shapingoffset of +/−100 μm in the prior art. Therefore, the precision of thepresent invention is increased significantly.

The present invention provides a coreless package structure that has nocore board. The built-up structure is not formed on the second surface26 b of the first dielectric layer 25, but formed on the first surface25 a of the first dielectric layer 25 only. Therefore, the packagestructure of the present invention is far thinner than a packagestructure of the prior art in which built-up structures are formed onboth sides of the core board.

The process of fabricating the conductive through holes is not performedin the present invention, so the present invention has a simplefabrication process and a low cost.

The semiconductor chip 24 protrudes from the second surface 25 b of thefirst dielectric layer 25. As such, the heat-dissipating capability isenhanced, and the semiconductor chip 24 may be protected fromover-heating and damaged. Therefore, the problem of the prior art may besolved that the heat generated by the semiconductor chip may not bedissipated effectively.

FIG. 2H′ shows another embodiment of the present invention. After thecore board 20 is removed, as shown in FIG. 2F, the carrier layer 21 andthe metal layer 23 may be kept and used as heat-dissipating components,so as to enhance the heat-dissipating capability and protect thesemiconductor chip 24 from over-heating and damaged. Then, solder balls30 are formed on the exposed surface of the second circuit layer 271,and a printed circuit board 31 is installed on the solder balls 30.

The present invention further provides a package structure having asemiconductor component embedded therein, the package structurecomprising: a first dielectric layer 25 having a first surface 25 a anda second surface 25 b opposing the first surface 25 a; a semiconductorchip 24 embedded in the first dielectric layer 25 in a manner that thesemiconductor chip 24 protrudes from the second surface 25 b of thefirst dielectric layer 25; a first circuit layer 26 disposed on thefirst surface 25 a of the first dielectric layer 25; a built-upstructure 27 disposed on the first surface 25 a of the first dielectriclayer 25 and the first circuit layer 26; and an insulating protectivelayer 28 disposed on the built-up structure 27.

In an embodiment of the present invention, the semiconductor chip 24 hasan active surface 24 a and an inactive surface 24 b opposing the activesurface 24 a; electrode pads 240 are disposed on the active surface 24 aand in the first dielectric layer 25; and the inactive surface 24 b anda part of a side surface adjacent the inactive surface 24 b protrudefrom the second surface 25 b of the first dielectric layer 25.

In an embodiment of the present invention, the first circuit layer 26has a plurality of first conductive vias 260 formed in the firstdielectric layer 25 and electrically connected to the electrode pads240.

In an embodiment of the present invention, the built-up structure 27 hasat least a second dielectric layer 270, a second circuit layer 271disposed on the second dielectric layer 270, and second conductive vias272 disposed in the second dielectric layer 270 and electricallyconnected to the first and second circuit layer 26 and 271.

In an embodiment of the present invention, a plurality of cavities 280are formed in the insulating protective layer 28, for exposing a part ofa surface of the second circuit layer 271 of the built-up structure 27,and solder balls 30 are disposed on the exposed surface of the secondcircuit layer 271, for a printed circuit board 31 to be disposedthereon.

In an embodiment of the present invention, the package structure furthercomprises a metal layer 23 disposed on the second surface 25 of thefirst dielectric layer 25; the metal layer 23 has an opening 230, inwhich the semiconductor chip 24 is received; and the metal layer 23 isused as a heat-dissipating component. The package structure furthercomprises a carrier layer 21 disposed on the metal layer 23 and theinactive surface of the semiconductor chip 24. The carrier layer 21 isalso used as a heat-dissipating component. The carrier layer 21 may bemade of copper.

In an embodiment of the present invention, the package structure furthercomprises a surface treatment layer 29 disposed on the exposed surfaceof the second circuit layer 271 of the built-up structure 27 in thecavities 280, and the surface treatment layer 29 is made ofelectroplated nickel/gold, ENIG, ENEPIG, immersion tin or OSP.

In a package structure having a semiconductor chip embedded therein anda method of fabricating the same according to the present invention,through the exposure and development processed performed on a resistlayer, the semiconductor chip may have better shaping offset than theprior art, and the alignment precision may be enhanced.

Through the removal of the core board, the present invention provides acoreless package structure that has no core board. The built-upstructure is disposed on one surface of the first dielectric layer only.Therefore, the thickness of the overall structure is reducedsignificantly, and the package structure can meet the low-profile andcompact-size requirements.

The built-up structure is disposed on one surface of the firstdielectric layer only. As such, the process of fabricating theconductive through holes is not necessary in the present invention, andthe present invention has simple fabrication processes and a low cost.

Since the semiconductor chip protrudes from the dielectric layer andcovers the metal layer, the heat-dissipating capability of thesemiconductor chip is enhanced significantly, and the semiconductor chipmay be protected from over-heating and damaged.

The foregoing descriptions of the detailed embodiments are onlyillustrated to disclose the features and functions of the presentinvention and not restrictive of the scope of the present invention. Itshould be understood to those in the art that all modifications andvariations according to the spirit and principle in the disclosure ofthe present invention should fall within the scope of the appendedclaims.

What is claimed is:
 1. A method of fabricating a package structurehaving a semiconductor component embedded therein, comprising: providinga core board having two opposing surfaces on which two carrier layersare formed; forming on the carrier layers two metal layers havingopenings for exposing a part of surfaces of the carrier layers;disposing on the carrier layers in the openings semiconductor chipshaving active surfaces and inactive surfaces opposing the activesurfaces, with electrode pads disposed on the active surfaces, thesemiconductor chips combining with the carrier layers in the openings bymeans of the inactive surfaces; forming on the metal layers and thesemiconductor chips first dielectric layers that have exposed firstsurfaces and second surfaces combined with the metal layers; formingfirst circuit layers on the first surfaces of the first dielectriclayers, and forming in the first dielectric layers a plurality of firstconductive vias electrically connected to the first circuit layers andthe electrode pads; forming built-up structures on the first surfaces ofthe first dielectric layers and the first circuit layers; forminginsulating protective layers on the built-up structures, and forming inthe insulating protective layers a plurality of cavities for exposing apart of surfaces of the built-up structures; and removing the coreboard, so as to expose the carrier layers.
 2. The method of claim 1,wherein de-bonding layers are formed between the two surfaces of thecore board and the carrier layers, such that the core board is removedby means of the de-bonding layers.
 3. The method of claim 1, wherein thecarrier layers are made of copper.
 4. The method of claim 1, wherein themetal layers are made by: forming resist layers on the carrier layers,and forming opening areas on the resist layers for exposing the part ofthe surfaces of the carrier layers; forming the metal layers on thecarrier layers within the opening areas; and removing the resist layers,so as to form the openings.
 5. The method of claim 1, wherein each ofthe built-up structures comprises at least a second dielectric layer, asecond circuit layer disposed on the second dielectric layer, and aplurality of second conductive vias disposed in the second dielectriclayer and electrically connected to the first and second circuit layers,such that a part of a surface of the second circuit layer of thebuilt-up structure is exposed from the cavities.
 6. The method of claim1, wherein, after the core board is removed, the carrier layers and themetal layers are used as heat-dissipating components.
 7. The method ofclaim 1, further comprising, after the core board is removed, removingthe carrier layers and the metal layers, so as to expose the secondsurfaces of the dielectric layers, with the inactive surfaces and a partof side surfaces adjacent to the inactive surfaces protruding from thesecond surfaces of the dielectric layers.
 8. The method of claim 1,further comprising forming surface treatment layers on the exposedsurfaces of the built-up structures in the cavities.
 9. The method ofclaim 8, wherein the surface treatment layers are made of a materialselected from the group consisting of electroplated nickel/gold,electroless nickel/gold, electroless nickel immersion gold (ENIG),electroless nickel electroless palladium immersion gold (ENEPIG),immersion tin and organic solderability preservative (OSP).